BM3G007MUV-LBE2

BM3G007MUV-LBE2 is a 650V GaN HEMT power stage. It provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate upto 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET. It is used in applications such as industrial equipment, power supplies with high power density, high efficiency demand, or bridge topology such as totem-pole PFC, LLC power supply, adaptor, etc.

• Nano Cap™ integrated output selectable 5V LDO
• Long time support product for industrial applications
• Wide operating range for VDD pin voltage, wide operating range for IN pin voltage
• Low VDD quiescent and operating current, low propagation delay
• High dv/dt immunity, adjustable gate drive strength
• Power good signal output, VDD UVLO protection
• Thermal shutdown protection, operating voltage range from 6.25V to 30V
• VDD quiescent current is 180μA typical
• Allowable input switching frequency is 2MHz maximum
• Operating temperature range from -40°C to +105°C, package style is VQFN046V8080