STGAP4STR

STGAP4STR is an automotive advanced isolated gate driver for IGBTs and SiC MOSFETs. It is a galvanically isolated single gate driver for IGBTs and SiC MOSFETs with advanced protection, configuration and diagnostic features. The architecture of the STGAP4S isolates the channel gate driving from the control and the low voltage interface circuitry through true galvanic isolation. The unique output architecture is designed to allow the use of an external MOSFET push-pull stage giving flexibility in terms of current capability dimensioning and easing the use of several power switches in parallel. The 2 pre-driver outputs are characterized by current capability and output voltage swing optimized for that topology and allow the use of a negative gate driving supply. Applications include inverters for EV/HEV, 600/1200V industrial inverters, EV charging stations, UPS equipment, AC/AC converters, DC/DC converters, solar inverters.

• High voltage rail up to 1200V, two output pins for direct driving of external MOSFET buffer
• Negative gate drive ability, dV/dt transient immunity ±100V/ns in full temperature range
• Integrated controller for isolated flyback power supply, programmable desaturation detection
• Active Miller clamp driver for external N‑channel MOSFET, programmable overcurrent detection
• Soft turn-off, VCE active clamp, two diagnostic status outputs
• Programmable UVLO and OVLO on each supply, programmable input deglitch filter
• Asynchronous stop command, isolated 8-bit A/D converter, integrated temperature sensor
• Programmable deadtime, with violation error, temperature warning and shutdown protection
• SPI interface for parameters programming and extended diagnostic
• Ambient temperature range from -40°C to 125°C, SO-36W package