TP70H300G4LSGB-TR

TP70H300G4LSGB-TR is a 700V, 300mohm SuperGaN® Gallium Nitride (GaN) FET. It is a normally-off device using Renesas’ Gen IV platform. It combines a state-of-the art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Applications include consumer, power adapters, low power SMPS and lighting.

• Dynamic RDS(on)eff production tested
• Transient over-voltage capability and E-mode gate driver operation without zener protection
• Very low QRR
• Reduced crossover loss
• 2kV HBM ESD rating
• Achieves increased efficiency in both hard- and soft-switched circuits
• Easy to drive with commonly used gate drivers