H11G1M

The H11G1M is a 6-pin high voltage photodarlington-type optically Coupled Optocoupler consists of gallium-arsenide infrared emitting diode coupled with a silicon Darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. It is suitable for CMOS logic interface, telephone ring detector, low input TTL interface and replace pulse transformer.

• 100μA at 80°C Maximum low leakage current
• 850V Maximum working insulation voltage
• 6000V High allowable overvoltage

การใช้งาน

Communications & Networking, Power Management, Signal Processing

คำเตือน

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.