MRF1K50NR5

MRF1K50NR5 is a high ruggedness N-channel enhancement mode lateral MOSFET RF power LDMOS transistor. This is a high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Typical application includes laser generation, plasma etching, particle accelerators, MRI and other medical applications, industrial heating, welding and drying systems (industrial, scientific, medical), radio broadcast, VHF TV broadcast (broadcast), VHF omnidirectional range (VOR), HF and VHF communications, weather radar (aerospace), VHF and UHF base stations (mobile radio).

• High drain-source avalanche energy absorption capability
• Unmatched input and output allowing wide frequency range utilization
• Device can be used single-ended or in a push-pull configuration
• Characterized from 30 to 50V for ease of use
• Suitable for linear application
• Integrated ESD protection with greater negative gate source voltage for improved Class C operation
• 1μAdc maximum gate source leakage current (VGS = 5Vdc, VDS = 0Vdc)
• 133Vdc maximum drain source breakdown voltage (VGS = 0Vdc, ID = 100mAdc)
• 2.2Vdc typical gate threshold voltage (VDS = 10Vdc, ID = 2130μAdc)
• OM-1230-4L package, operating junction temperature range from -40 to +225°C