PSMN4R8-100YSEX

PSMN4R8-100YSEX is an N-channel enhancement mode MOSFET in an LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSon and a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package. PSMN4R8-100YSE complements the latest "hot-swap" controllers ‒ robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses delivering optimum efficiency when turned fully ON, and an 80% smaller footprint than existing D2PAK types. The applications include hot swap, load switch, soft start, E-fuse, and telecommunication systems based on a 48V backplane/supply rail.

• Fully optimized Safe Operating Area (SOA) for superior linear mode operation
• Low RDSon for low I2R conduction losses
• LFPAK56E package for applications that demand highest performance and reliability in 30mm² footprint
• Drain-source voltage is 100V max (25°C ≤ Tj ≤ 175°C)
• Drain current is 120A max (VGS = 10V; Tmb = 25°C)
• Total power dissipation is 294W max (Tmb = 25°C)
• Drain-source on-state resistance is 3.6mohm typ (VGS = 10V; ID = 25A; Tj = 25°C)
• Gate-drain charge range from 4 to 35nC (ID = 25A; VDS = 50V; VGS = 10V;Tj = 25°C)
• Total gate charge range from 40 to 120nC (ID = 25A; VDS = 50V; VGS = 10V;Tj = 25°C)
• 4 leads SOT1023 package, junction temperature range from -55 to 175°C