PSMN0R7-25YLDX

PSMN0R7-25YLDX is a logic level gate drive N-channel enhancement mode MOSFET in the LFPAK56 package. NextPowerS3 portfolio utilizing NXP's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high-efficiency applications at high switching frequencies. The applications include on-board DC: DC solutions for server and telecommunications, secondary-side synchronous rectification in telecommunication applications, voltage regulator modules (VRM), point-of-load (POL) modules, power delivery for V-core, ASIC, DDR, GPU, VGA and system components, brushed and brushless motor control, power O-Ring.

• 100% Avalanche tested at I(AS) = 190A
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery, low spiking and ringing for low EMI designs
• Unique "SchottkyPlus" technology; Schottky-like performance with <lt/>1μA leakage at 25°C
• Optimised for 4.5V gate drive, low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds
• Wave solderable; exposed leads for optimal visual solder inspection
• Drain-source voltage is 25Vmax (25-150°C), drain-gate voltage is 25V max (25 to 150°C, RGS=20Kohm)
• Total power dissipation is 158W max (Tmb = 25°C)
• 4 leads SOT1023 package, junction temperature range from -55 to 150°C