S25FL512SAGBHBA10

S25FL512SAGBHBA10 is a S25FL series 3V, FL-S serial peripheral interface (SPI) flash memory IC using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance and 65-nm process lithography. In addition, the FL-S family adds support for double data rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The eclipse architecture features a page programming buffer that allows up to 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. It offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage.

• CMOS 3.0V core with versatile I/O, SPI with multi-I/O
• Serial command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families
• READ commands-Normal, fast, dual, quad, fast DDR, dual DDR, quad DDR
• AutoBoot power up/reset and execute a normal/quad read command automatically at preselected address
• Common flash interface (CFI) data for configuration information
• 512-byte page programming buffer, quad-input page programming (QPP) for slow clock systems
• Data retention- 20 year data retention, OTP array of 1024 bytes, advanced sector protection (ASP)
• Core supply voltage range from 2.7V to 3.6V, automotive, AEC-Q100 grade2 –40 to 105°C temperature
• 512Mb density, 133MHz speed, 24-ball BGA package
• EHPLC, 5 x 5 ball BGA footprint with RESET# and VIO, uniform 256kB sectors