IPP60R190P6XKSA1

The IPP60R190P6 is a 600V CoolMOS™ P6 N-channel Power MOSFET with reduced gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ P6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

• Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
• Very high commutation ruggedness
• Easy to use
• Increased dV/dt ruggedness
• Halogen-free, Green device
• Qualified according to JEDEC for target applications
• Higher Vth
• Optimized integrated Rg
• Improved efficiency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-OFF
• Suitable for hard and soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behaviour
• High robustness and better efficiency
• Outstanding quality and reliability

การใช้งาน

Industrial, Power Management, Communications & Networking

คำเตือน

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

บันทึก

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.