FM24CL04B-GTR

FM24CL04B-GTR is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. The FM24CL04B is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24CL04B ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

• 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
• High-endurance 100 trillion (10^14) read/writes, 151-year data retention
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast 2-wire serial interface (I2C), direct hardware replacement for serial (I2C) EEPROM
• Up to 1MHz frequency, supports legacy timings for 100KHz and 400KHz
• Power supply range from 2.7 to 3.65V
• Standby current is 3µA typ at SCL=SDA=VDD
• Output leakage current is +1µA maximum at VSS ≤ VIN ≤ VDD
• 8-pin SOIC package
• Industrial temperature range from -40°C to +85°C