CY62167ELL-45ZXIT

CY62167ELL-45ZXIT is a high-performance CMOS static RAM organized as 1 M words by 16 bits/2 M words by 8 bits. This device features an advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power-down feature that reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active low CE1 HIGH, or CE2 LOW, or both BHE and active low BLE are HIGH). To write to the device, take chip enables (active low CE1 LOW and CE2 HIGH) and write enable (active low WE) input LOW. If byte low enable (active low BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If byte high enable (active low BHE) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).

• Configurable as 1 M × 16 or as 2 M × 8 SRAM
• Easy memory expansion with active low CE1, CE2, and active low OE features
• Automatic power-down when deselected
• CMOS for optimum speed and power
• VCC range from 4.5 to 5.5V, power dissipation is 2.2mA typ (f = 1MHz), standby ISB2 is 1.5µA typ
• VCC for data retention is 2.0V minimum, operation recovery time is 45ns minimum
• Data retention current is 12µA max (VCC = VDR, CE1 > VCC – 0.2V or CE2 < 0.2V)
• Input capacitance is 10pF maximum (TA = 25°C, f = 1MHz, VCC = VCC(typ))
• Output capacitance is 10pF maximum (TA = 25°C, f = 1MHz, VCC = VCC(typ))
• 48-pin TSOP I package, industrial temperature range from -40°C to +85°C