CY62128EV30LL-45SXI

CY62128EV30LL-45SXI is a high-performance CMOS static RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing MoBL® in portable applications. It also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99% when deselected. The eight input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled, or a write operation is in progress. To write to the device, take chip enable and write enable inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pin. To read from the device, take chip enable and output enable LOW while forcing write enable HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins.

• Very high speed: 45ns
• Wide voltage range from 2.2V to 3.6V
• Pin compatible with CY62128DV30
• Ultra-low standby power of standby current: 1µA(typical)
• Ultra low active power with typical active current: 1.3mA at f = 1MHz
• Easy memory expansion with active low CE1, CE2 and active low OE features
• Automatic power-down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• 90nm process technology
• Temperature range from –40°C to 85°C