CY15E064Q-SXET

CY15E064Q-SXET is a CY15E064Q 64-Kbit nonvolatile memory employing an advanced ferroelectric process. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. It performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. It is ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

• 64Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 16MHz frequency
• Direct hardware replacement for serial flash and EEPROM, supports SPI mode 0 (0, 0), mode 3 (1, 1)
• Sophisticated write protection scheme, hardware protection using the write protect active-low WP pin
• Software protection using write disable instruction
• Low power consumption, 300μA active current at 1MHz
• Voltage operation: VDD = 4.5V to 5.5V
• AEC Q100 grade 1 compliant
• Automotive-E temperature range from –40°C to +125°C