6ED2231S12TXUMA1

6ED2231S12T is a 1200V three-phase gate driver for IGBT/SiC with an integrated bootstrap diode and OCP. It has a high voltage, high-speed power IGBT or SiC MOSFET gate driver with three independent high side and low side referenced output channels for three-phase applications. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or TTL outputs, down to 3.3V logic. An over‐current protection (OCP) function which terminates all six outputs can also be derived from this resistor. An open drain FAULT signal is provided to indicate that an over-current or under-voltage shutdown has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network. Typical application includes industrial drives, embedded inverters for motor control in pumps, fans, and commercial air conditioning.

• ≤1200V VS-OFFSET, VCC range from 13V to 20V, +0.35A / -0.65A typical IO+ / IO-
• 700ns/ 650ns typical tON / tOFF, 460ns typical deadtime
• Optimized for IGBT (insulated gate bipolar transistor) / SiC (Silicon carbide) MOSFET
• Integrated ultra‐fast bootstrap diode, floating channel designed for bootstrap operation
• Output source/sink current capability +0.35A/‐0.65A
• Tolerant to negative transient voltage up to -100V (Pulse width is up 700ns) given by SOI-technology
• Undervoltage lockout for both channels, over current protection with ±5% ITRIP threshold
• Fault reporting, automatic fault clear and enable function on the same pin
• Matched propagation delay for all channels, integrated 460ns deadtime protection
• DSO-24 package, ambient temperature rating range from -40 to 125°C