G3R20MT17K

G3R20MT17K is a N-channel enhancement mode silicon carbide MOSFET. Applications includes EV fast charging, solar inverters, industrial motor drives, transportation, industrial power supply, smart grid and HVDC, induction heating and welding, pulsed power.

• Drain-source voltage is 1700V (V=0V, I=100µA, T=25°C), RDS(ON) is 20mohm typ (T=25°C, VGS=15V)
• G3R™ Technology with +15V gate drive, softer R v/s temperature dependency
• LoRing™ - electromagnetically optimized design, smaller R and lower Q
• Low device capacitances (C0ss, CRss ), superior cost-performance index
• Robust body diode with low V and low QRR, industry-leading UIL & short-circuit robustness
• Compatible with commercial gate drivers, low conduction losses at all temperatures
• Reduced ringing, faster, more efficient switching, continuous forward current is 67A (T=100°C)
• Lesser switching spikes and lower losses, better power density and system efficiency
• Ease of paralleling without thermal runaway, superior robustness and system reliability
• TO-247-4 package, operating temperature range from -55 to 175°C