DMN65D8L-7

DMN65D8L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include DC-DC converters, power-management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

• Low on-resistance, low gate threshold voltage
• Low input capacitance, fast switching speed
• Small surface-mount package, ESD protected gate
• Drain-source voltage is 60V at TA = +25°C
• Gate-source voltage is ±20V at TA = +25°C
• Continuous drain current is 310mA at TA = +25°C, steady state, VGS = 10V
• Pulsed drain current (10µs pulse, duty cycle = 1%) is 800mA at TA = +25°C
• Total power dissipation is 370mW at TA = +25°C
• SOT23 (standard) package
• Operating and storage temperature range from -55 to +150°C