DMN63D8LDW-7

DMN63D8LDW-7 is a dual N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include DC-DC converters, power management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

• Low on-resistance, low input capacitance, ESD protected gate
• Fast switching speed, small surface mount package
• Drain-source voltage is 30V at TA = +25°C
• Gate-source voltage is ±20V at TA = +25°C
• Continuous drain current is 220mA at TA = +25°C, VGS = 10V, steady state
• Pulsed drain current (10µs pulse, duty cycle = 1%) is 800mA at TA = +25°C
• Total power dissipation is 300mW at TA = +25°C
• Static drain-source on-resistance is 2.8ohm max at VGS = 10.0V, ID = 250mA, TA = +25°C
• SOT363 (standard) case
• Operating and storage temperature range from -55 to +150°C