DMG1012T-7

DMG1012T-7 is a N-channel enhancement mode MOSFET.

• Low on-resistance, low gate threshold voltage
• Low input capacitance, fast switching speed
• Low input/output leakage, ESD protected up to 2kV
• Drain-source voltage is 20V at TA = +25°C
• Gate-source voltage is ±6V at TA = +25°C
• Continuous drain current is 0.63A at TA = +25°C, steady state
• Pulsed drain current is 3A at TA = +25°C
• Total power dissipation is 0.28W at TA = +25°C
• SOT523 package
• Operating and storage temperature range from -55 to +150°C