ADRF5022BCCZN

ADRF5022BCCZN is a non-reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process. It requires a positive supply of +3.3V and a negative supply of -3.3V. This device employs complementary metal-oxide semiconductor (CMOS)-/low-voltage transistor to transistor logic (LVTTL)-compatible controls. It can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is connected to the ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance are derated. It is used in applications such as test and instrumentation, cellular infrastructure: 5G millimeter wave, military radios, radars, and electronic countermeasures (ECMs), microwave radios and very small aperture terminals (VSATs), industrial scanners.

• Ultra-wideband frequency range from 100MHz to 45GHz, nonreflective design
• No low-frequency spurious signals, all off-state control, high input linearity
• Positive control interface: CMOS-/LVTTL-compatible, hot switching is 30dBm maximum
• Insertion loss is 1.2dB typical at (100MHz to 18GHz, VDD = 3.3V, VSS = -3.3V)
• 0.1dB power compression is 31dBm typical at (VDD = 3.3V, VSS = -3.3V)
• Input third-order intercept is 55dBm typical at (VDD = 3.3V, VSS = -3.3V)
• Rise time and fall time is 3ns typical at (10% to 90% of RF output (RFOUT))
• Through path is 30dBm maximum at (VDD = 3.3V, VSS = -3.3V)
• Terminated path is 24dBm maximum at (VDD = 3.3V, VSS = -3.3V)
• Operating temperature range from -40°C to +105°C, 20-terminal land grid array [LGA] package

บันทึก

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