GAN041-650WSBQ

GAN041-650WSBQ is a 650V, 35mohm Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. The applications include hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, and UPS inverters, and servo motor drives.

• Ultra-low reverse recovery charge, simple gate drive (0V to +10V or 12V), robust gate oxide (±20V)
• High gate threshold voltage (+4V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode, transient over-voltage capability (800V)
• Drain-source voltage is 650V max (55°C ≤ Tj ≤ 175°C)
• Drain current is 47.2A max (VGS = 10V; Tmb = 25°C), total power dissipation is 187W max (Tmb = 25°C)
• Drain-source on-state resistance is 35mohm typ (VGS = 10V; ID = 32A; Tj = 25°C)
• Gate-drain charge is 6.6nC typ (ID = 32A; VDS = 400V; VGS = 10V; Tj = 25°C)
• Total gate charge is 22nC typ (ID = 32A; VDS = 400V; VGS = 10V; Tj = 25°C)
• Recovered charge is 150nC typ (IS = 32A; dIS/dt = -1000A/µs; VGS = 0V; VDS = 400V)
• 3 leads SOT429 package, junction temperature range from -55 to 175°C