1EDI302XASEVALBOARDTOBO1

1EDI302XASEVALBOARDTOBO1 is an eval board that has been designed to ease the performance evaluation of EiceDRIVER™ 1EDI302xAS gate driver which is suitable for IGBT based applications. This 1EDI302xAS is a high-voltage IGBT/SiC-MOSFET driver for automotive motor drives with a power above 5KW. The device is based on Infineon's Coreless Transformer (CT) technology, providing galvanic insulation between the low and high-voltage domain. The primary logic of the device supports 5V and 3.3V. The high-voltage domain (secondary side) can drive IGBT/Sic power switches directly or an external booster stage. Short propagation delay and controlled internal tolerances lead to minimal distortion of the PWM signal. The device features a high output stage current of typically 10A. The integrated Miller clamping stage with typically 10A allows unipolar supply of the IGBT/SiC-MOSFET power switch. Suitable for main inverter, DCDC, OBC, Powertrain inverter for CAV and industrial drives applications.

• Product variant: 1EDI3020AS, 1EDI3021AS, 1EDI3023AS
• Easy product performance evaluation to shorten development schedules and accelerate your TTM
• Seamless product evaluation and strong design support via online simulation and evaluation boards