BF470

The BF470 is a high-frequency PNP silicon transistor designed for applications that require high-speed switching and low noise performance. It is commonly used in RF amplifiers, switching circuits, and other high-frequency applications due to its excellent characteristics and reliable operation. The BF470 transistor is a reliable and high-performance component ideal for high-frequency and low-noise applications. Its fast switching capabilities and excellent frequency response make it a valuable choice for engineers and designers in advanced electronic systems.

• Collector-Emitter Voltage (Vceo): 50V
• Collector-Base Voltage (Vcbo): 50V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 1A
• Base Current (Ib): 0.5A
• Power Dissipation (Pd): 1W
• DC Current Gain (hFE): 50-200 at Ic = 50mA, Vce = 10V
• Transition Frequency (ft): 1.5 GHz (typical)
• Package Type: TO-92
• Pin Configuration: 3 Pins (Collector, Base, Emitter)
• Mounting Style: Through-Hole
• Junction Temperature (Tj): -65°C to +150°C
• Thermal Resistance, Junction to Ambient (RθJA): 100°C/W

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