SSM2212RZ-R7

SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. It can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. It also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the device does not need offset trimming in most circuit.

• Noise voltage density is 1.6nV/√Hz typical at 10Hz
• Excellent current gain match is 0.5% typical
• Outstanding offset voltage drift is 0.03μV/°C typical
• High gain bandwidth product is 200MHz typical
• Input bias current is 50nA maximum
• Input offset current is 6.2nA maximum
• Bulk resistance is 0.3 ohm typical
• Input offset current drift is 40pA/°C typical
• Operating temperature is -40°C to +85°C
• Package style is 8-lead standard small outline [SOIC-N]

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