VS-3C04ED07T-M3/I

VS-3C04ED07T-M3/I is a 650V, 4A Gen 3 power SiC merged PIN schottky diode. This wide band gap SiC based 650V Schottky diode, designed for high performance and ruggedness. It is an optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behaviour. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.

• Creepage and clearance distance of 3.6mm minimum
• Very low profile – typical height of 1.7mm
• Majority carrier diode using schottky technology on SiC wide band gap material
• Improved VF and efficiency by thin wafer technology
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behaviour
• 175°C maximum operating junction temperature
• Meets JESD 201 class 2 whisker test
• MPS structure for high ruggedness to forward current surge events