TP65H035G4YS

TP65H035G4YS is a 650V, 35mohm gallium nitride (GaN) FET. It is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. It is ideal for datacom, broad industrial, PV inverter and servo motor applications.

• JEDEC qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design featuring a wide gate safety margin and transient over-voltage capability
• Enhanced inrush current capability and reduced crossover loss
• Enables AC-DC bridgeless totem-pole PFC designs
• Achieves increased efficiency in both hard- and soft-switched circuits
• Easy to drive with commonly-used gate drivers
• GSD pin layout improves high speed design
• Available in 4 pin TO-247 package