FDV303N

The FDV303N is an N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. it is an alternative to TN0200T and TN0201T transistors.

• Very low level gate drive requirements allowing direct operation in 3V circuits
• 6kV human body model gate-source zener for ESD ruggedness