DE275X2-102N06A

The DE275X2-102N06A is a matched pair RF power MOSFET device in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65MHz very low insertion inductance and isolated substrate with excellent thermal transfer. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.

• N-channel enhancement mode
• Common source push-pull pair
• Low Qg and Rg
• High dv/dt rating
• Nanosecond switching
• Low insertion inductance

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RF Communications