IRG4PC40KDPBF

The IRG4PC40KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies <gt/>5kHz and short-circuit rated to 10μs at 125°C, VGE = 15V. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.

• Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

การใช้งาน

Alternative Energy, Power Management, Maintenance & Repair