IKW30N60H3FKSA1

The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

• Low switching losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
• Short circuit capability
• Excellent performance
• Low switching and conduction losses

การใช้งาน

Power Management, Alternative Energy

คำเตือน

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.