STGAP1BSTR

STGAP1BSTR is a galvanically isolated single advanced gate driver for N-channel MOSFETs and IGBTs with advanced protection, configuration and diagnostic features. The architecture of the STGAP1BS isolates the channel from the control and the low voltage interface circuitry through true galvanic isolation. The gate driver is characterized by 5A capability, making the device also suitable for high power inverter applications such as motor drivers in hybrid and electric vehicles and in industrial drives. The output driver section provides a rail-to-rail output with the possibility to use a negative gate driver supply. Applications include 600/1200V inverters, inverters for EV/HEV, EV charging stations, industrial drives, UPS equipment, DC/DC converters, solar inverters.

• Self-diagnostic routines for protection features, full effective fault protection
• SPI interface for parameters programming, temperature warning and shutdown protection
• Asynchronous stop command, programmable deadtime, with violation error
• Diagnostic status output, UVLO and OVLO functions, programmable input deglitch filter
• SENSE input, VCE active clamping, output 2-level turn-off
• Negative gate drive ability, active miller clamp, desaturation detection
• Separate sink and source for easy gate driving configuration, high voltage rail up to 1500V
• 100ns overall input/output propagation delay
• Driver current capability: 5A sink/source current at 25°C, AEC-Q100 qualified
• Ambient operating temperature range from -40°C to +125°C, SO24W package