MT29F2G08ABAEAH4-IT:E

MT29F2G08ABAEAH4-IT:E is a NAND flash memory. It includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. This device has an internal 4-bit ECC that can be enabled using the GET/SET features.

• Open NAND Flash Interface (ONFI) 1.0-compliant, single-level cell (SLC) technology
• Command set: ONFI NAND flash protocol
• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
• WP# signal: Write protect entire device
• First block (block address 00h) is valid when shipped from factory with ECC
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
• RESET (FFh) required as first command after power-on
• Internal data move operations supported within the plane from which data is read
• Quality and reliability: data retention: 10 years, endurance: 100,000 PROGRAM/ERASE cycles
• 63-ball VFBGA package, -40°C to +85°C industrial operating temperature range