S29AL008J70BFI023

S29AL008J70BFI023 is an 8Mbit, 3.0 Volt-only flash memory organized as 1,048,576 bytes or 524,288 words. The word-wide data (x16) appears on DQ15–DQ0; the bytewide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0volt VCC supply. A 12.0 V VPP or 5.0 VCC is not required for write or erase operations. The device can also be programmed in standard EPROM programmers. The device offers access times of up to 55 ns allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0-volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

• 70ns access speed
• Full voltage range: 2.7 to 3.6V read and write operations for battery-powered applications
• Manufactured on 110nm process technology, fully compatible with 200nm S29AL008D
• May be programmed and locked at the factory or by the customer
• A hardware method of locking a sector to prevent any program or erase operations within that sector
• Sectors can be locked in-system or via programming equipment
• Temporary Sector Unprotect feature allows code changes in previously locked sectors
• Reduces overall programming time when issuing multiple program command sequences
• Pinout and software compatible with single-power supply Flash
• Fine-pitch Ball-Grid Array package, industrial temperature range from -40°C to +85°C