CY62167EV30LL-45BVXIT

CY62167EV30LL-45BVXIT is a high-performance CMOS static RAM organized as 1M words by 16 bits or 2M words by 8 bits. It features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. It also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device in standby mode when deselected (active-low CE1 HIGH or active-low CE2 LOW or both active-low BHE and active-low BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high-impedance state when: the device is deselected (active-low CE1 HIGH or active-low CE2 LOW), outputs are disabled (active-low OE HIGH), both Byte High Enable and Byte Low Enable are disabled (active-low BHE, active-low BLE HIGH), or a write operation is in progress (active-low CE1 LOW, active-low CE2 HIGH and active-low WE LOW).

• Very high speed: 45ns
• Wide voltage range from 2.20V to 3.60V
• Maximum standby current is 12µA
• Typical active current is 2.2mA at f=1MHz
• Easy memory expansion with active-low CE1, active-low CE2, and active-low OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• VCC for data retention is 1.5V
• 48-ball VFBGA package
• Automotive temperature range from -40°C to +85°C