CY62136EV30LL-45BVXI

CY62136EV30LL-45BVXI is a CY62136EV30 MoBL® 2Mbit (128K × 16) static RAM. This high performance CMOS static RAM organized as 128K words by 16bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (active-low CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high impedance state when: deselected (active-low CE HIGH), outputs are disabled (active-low OE HIGH), both Byte High Enable and Byte Low Enable are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW).

• Pin compatible with CY62136CV30
• Ultra low standby power, ultra low active power
• Typical active current: 2mA at f = 1MHz
• Easy memory expansion with active-low CE and OE features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed/power
• Very high speed: 45ns
• 2Mbit density, × 16 bus width
• 3V typical voltage range
• 48-ball VFBGA package, industrial ambient temperature range –40°C to +85°C