CY15B256Q-SXAT

CY15B256Q-SXAT is a CY15B256Q 256Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. It performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. It is ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

• 256Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 33MHz frequency
• Direct hardware replacement for serial flash and EEPROM, supports SPI mode 0 (0, 0), mode 3 (1, 1)
• Sophisticated write-protection scheme, hardware protection using write protect active-low WP pin
• Software protection using write disable instruction
• Low power consumption, 5mA active current at 33MHz, 500µA standby current
• Low-voltage operation: VDD = 2.7V to 3.6V, AEC Q100 grade 1 compliant
• Automotive-E temperature range from –40°C to +125°C
• 8-pin SOIC package