CY15B102Q-SXET

CY15B102Q-SXET is a 2Mbit (256 K × 8) serial (SPI) automotive F-RAM. This is a 2Mbit nonvolatile memory employing an advanced ferroelectric process. F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15B102Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The CY15B102Q is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM.

• 8-pin SOIC package type, automotive-E
• Voltage range from 2.0V to 3.6V, 2Mbit density
• Temperature range from –40 to +125°C
• 2Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8
• High-endurance 10 trillion (1013) read/writes, 121-year data retention
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 25MHz frequency
• Direct hardware replacement for serial flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1), sophisticated write protection scheme
• Device ID, manufacturer ID and product ID, low power consumption