CY7C1021DV33-10ZSXI

CY7C1021DV33-10ZSXI is a high-performance CMOS, 1-Mbit (64 K × 16) static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking chip enable (active low CE) and write enable (active low WE) inputs LOW. If Byte low enable (active low BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If byte high enable (active low BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15). Reading from the device is accomplished by taking chip enable (active low CE) and output enable (active low OE) LOW while forcing the write enable (active low WE) HIGH. Application includes domestic robots, industrial automation.

• 1-Mbit density, data width × 16-bits, C9, 90nm technology
• Voltage range from 3V to 3.6V, 10ns speed
• Pin-and function-compatible with CY7C1021CV33
• VCC operating supply current is 60mA max (100MHz, VCC=Max, IOUT=0mA)
• Automatic CE power down current – CMOS inputs is 3mA max (Max VCC, -\0.3V)
• 2.0V data retention, automatic power-down when deselected
• CMOS for optimum speed/power, independent control of upper and lower bits
• VCC for data retention is 2V min
• Input and output capacitance is 8pF max (TA=25°C, f=1MHz, VCC=VCC(typ))
• 44-pin TSOP Type II package, industrial temperature range from -40°C to 85°C