HMC815BLC5

HMC815BLC5 is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter. This device provides a small signal conversion gain of 12dB and a sideband rejection of 20dBc. The HMC815B utilizes a driver amplifier proceeded by an in phase/quadrature (I/Q) mixer where the LO is driven by an active 2× multiplier. IF1 and IF2 mixer inputs are provided, and an external 90° hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC815B is a smaller alternative to hybrid style single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques. Applications include point to point and point to multipoint radios, military radars, electronic warfare, and electronic intelligence, satellite communications, sensors.

• Conversion gain is 12dB typical at (TA = 25°C)
• Sideband rejection is 20dBc typical at (TA = 25°C)
• Output power for 1dB compression is 20dBm typical at (TA = 25°C)
• Output third-order intercept is 27dBm typical at (TA = 25°C)
• 2× LO to RF isolation is 10dB typical at (TA = 25°C)
• 2× LO to IF isolation is 15dB typical at (TA = 25°C)
• RF return loss is 12dB typical at (TA = 25°C)
• LO return loss is 15dB typical at (TA = 25°C)
• Total drain current (RF amplifier) is 270mA typical at (TA = 25°C)
• Operating temperature range from -40°C to +85°C, 32-terminal LCC package

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