CRD-5FF0912P

Evaluation board demonstrates the high switching performance of Cree 3rd generation silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) in a 7L D2PAK package. The new surface-mount device (SMD), specifically designed for high voltage MOSFETs has a small footprint with a wide creepage distance of 7mm between drain and source. The new package also includes a separate driver source connection, which reduces gate ringing and provides clean gate signals. This evaluation board (Figure 1) comes configured as a basic half bridge circuit with two C3M0120090J SiC MOSFETs installed. The board can easily be configured into common power conversion topologies such as synchronous boost, synchronous buck, Inverter and other topologies.